| PART |
Description |
Maker |
| UPD44325092BF5-E33-FQ1 PD44325092B-15 |
4M X 9 QDR SRAM, 0.45 ns, PBGA165
36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| UPD44325084BF5-E33-FQ1 PD44325084BF5-E50-FQ1-A PD4 |
4M X 8 QDR SRAM, 0.45 ns, PBGA165
36M-BIT QDRTM II SRAM 4-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| PD46185092BF1-E40-EQ1 PD46185182BF1-E40-EQ1 PD4618 |
18M-BIT QDRTM II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| CY7C1515KV18-250BZXI CY7C1515KV18-300BZC CY7C1515K |
72-Mbit QDR II SRAM 4-Word Burst Architecture
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165
|
http://
Cypress Semiconductor, Corp.
|
| CY7C1514V18 CY7C1514V18-200BZC CY7C1514V18-250BZC |
72-Mbit QDR-II?SRAM 2-Word Burst Architecture
72-Mbit QDR-II(TM) SRAM 2-Word Burst Architecture
72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
72-MBIT QDR-II⒙ SRAM 2-WORD BURST ARCHITECTURE
72-Mbit QDR-II SRAM 2-Word Burst Architecture
|
CYPRESS[Cypress Semiconductor]
|
| HM66AEB18202 HM66AEB36102BP-40 HM66AEB18202BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| HM66AQB18204BP-33 HM66AQB36104BP-40 HM66AQB9404BP- |
Memory>Fast SRAM>QDR SRAM
36-Mbit QDRTMII SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| CY7C1314BV18 CY7C1312BV18 |
18-Mbit QDR庐 II SRAM Two-Word Burst Architecture
18-Mbit QDR? II SRAM Two-Word Burst Architecture
|
Cypress Semiconductor
|
| CY7C1911BV18-278BZXC CY7C1911BV18-278BZXI CY7C1911 |
18-Mbit QDRII SRAM 4-Word Burst Architecture 2M X 9 QDR SRAM, 0.45 ns, PBGA165
18-Mbit QDRII SRAM 4-Word Burst Architecture 2M X 8 QDR SRAM, 0.45 ns, PBGA165
18-Mbit QDRII SRAM 4-Word Burst Architecture 1M X 18 QDR SRAM, 0.45 ns, PBGA165
18-Mbit QDRII SRAM 4-Word Burst Architecture 512K X 36 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1141V18 CY7C1145V18 CY7C1156V18 CY7C1143V18 CY |
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp.
|
| CY7C1510V18-167BZXC CY7C1510V18-167BZXI CY7C1514V1 |
72-Mbit QDR-II垄芒 SRAM 2-Word Burst Architecture
72-Mbit QDR-II SRAM 2-Word Burst Architecture
72-Mbit QDR-II?SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
| CY7C1410V18 CY7C1410V18-167BZC CY7C1410V18-200BZC |
4M X 8 QDR SRAM, 0.45 ns, PBGA165
36-Mbit QDR-II SRAM 2-Word Burst Architecture
36-Mbit QDR-II?/a> SRAM 2-Word Burst Architecture
36-Mbit QDR-II?SRAM 2-Word Burst Architecture
|
CYPRESS SEMICONDUCTOR CORP
|
